Direct observation of strain and confinement shaping the hole subbands of Ge quantum wells Enrico Della Valle, Arianna Nigro, Miki Bonacci, Nicola Colonna, Andrea Hofmann, Michael Schüler, Nicola Marzari, Ilaria Zardo, Vladimir N Strocov arXiv.2603.18753 (2026)
Non-equilibrium transport reveals energy level degeneracy Artem O Denisov, Christoph Adam, Hadrien Duprez, Jessica Richter, Zhuoyu Chen, Andrea Hofmann, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin arXiv.2603.00762 (2026)
High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures Luigi Ruggiero, Carlo Ciacca, Pauline Drexler, Vera Jo Weibel, Christian Olsen, Christian Schönenberger, Dominique Bougeard, Andrea Hofmann arXiv.2512.20238 (2025)
Strain Engineering of Ge Quantum Wells in Planar Ge/Si1 − xGex Heterostructures Arianna Nigro, Alexander Vogel, Alicia Ruiz‐Caridad, Vera Jo Weibel, Diego Nieri Orfatti, Johannes Trautvetter, Andrea Hofmann, Riccardo Rurali, Ilaria Zardo Adv. Mater. Interfaces12, no. 24 (2025)
Impact of surface treatments on the transport properties of germanium 2DHGs Nikunj Sangwan, Eric Jutzi, Christian Olsen, Sarah Vogel, Arianna Nigro, Ilaria Zardo, Andrea Hofmann ACS Appl. Electron. Mater. 2025, 7, 19, 8844–8849 (2025)
Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures Arianna Nigro, Eric Jutzi, Fabian Oppliger, Franco de Palma, Christian Olsen, Alicia Ruiz Caridad, Gerard Gadea, Pasquale Scarlino, Ilaria Zardo, Andrea Hofmann CS Appl. Electron. Mater. 2024, 6, 7, 5094–5100 (2024)
High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures Arianna Nigro, Eric Jutzi, Nicolas Forrer, Andrea Hofmann, Gerard Diaz, Ilaria Zardo Phys. Rev. Materials 8, 066201 (2024)
High-fidelity two-qubit gates of hybrid superconducting-semiconducting singlet-triplet qubits Maria Spethmann, Stefano Bosco, Andrea Hofmann, Jelena Klinovaya, Daniel Loss Phys. Rev. B 109, 085303 (2024)
