Our research focuses on electrons and holes confined in semiconductor-based devices. For example, we study holes in germanium confined into two dimensions: The confinement of the valence band states is achieved by growing a heterostructure of SiGe barriers sandwiching the Ge quantum well. The emerging states possess a - compared to valence band states in other materials - unusually large mobility and small effective mass, which facilitates the confinement into high-quality low-dimensional devices by means of local topgate electrodes.
Spin qubits
When confined into quantum dots, the discrete Zeeman-split states are used to encode the two states of a qubit. Within the NCCR SPIN project, we aim at understanding the characteristics of these discrete states so as to build fast qubits with low decoherence.
Super/Semi hybrid devices
When bringing Ge in close contact with a superconductor, the semiconductor becomes proximitized. Supercurrent can flow across the Ge junction, and this supercurrent is gate-tunable due to the possibility to gate the semiconductor. We are interested in the properties of the states emerging due to the interaction of the two types of material.
Bilayer graphene quantum dot qubits
Graphene is a 2D material with a linear dispersion relation. If two layes of graphene are coupled, a band gap opens, allowing to form quantum dots. In a collaboration with ETH Zürich, we are exploring bilayer graphene quantum dots as host for spin, valley or spin-valley qubits.
Open positions
Master’s Project in Germanium Hybrid Quantum Systems
Our group is exploring hybrid quantum devices that combine the unique properties of semiconductors and superconductors.
The project focuses on developing and studying coherent electronic systems with potential applications in quantum information and sensing.
As a master’s student, you will gain hands-on experience in:
- Nanofabrication and cleanroom techniques
- Low-temperature and microwave measurements
- Data analysis and modeling of quantum devices
This project is ideal for students interested in quantum physics, solid-state devices, and experimental nanoscience.
Previous experience in condensed matter or device physics is helpful but not required - curiosity and motivation matter most!
Master’s Project in Bilayer Graphene Quantum Devices
Our group investigates quantum transport and electronic confinement in high-quality bilayer graphene heterostructures, aiming to explore gate-defined quantum dots and their tunable properties.
The project focuses on advanced device fabrication and characterization - from atomically clean stacking to quantum transport at cryogenic temperatures - to study electronic confinement and bandgap engineering in bilayer graphene. As a master’s student, you will gain hands-on experience in:
- Advanced stacking and encapsulation techniques
- Nanofabrication and cleanroom processes
- Low-temperature transport measurements of bilayer graphene quantum dots
- Data analysis and modeling of quantum devices
This project is ideal for students excited about quantum physics, two-dimensional materials, and experimental nanoscience.
Previous experience in condensed matter or nanofabrication is welcome but not required — enthusiasm and curiosity are what matter most!
We are always looking for excellent and motivated people at all academic stages!
For applying, please send an email to A. Hofmann with your grades, your CV, your publications and/or a thesis, the contact details of one to three references and a short motivation stating your interest in working in our group.
